PROJECTION ETCHING OF KERATIN THIN FILMS FOR FABRICATION OF SKIN STRUCTURE USING ARF EXCIMER LASER
Bibi Safia Haq1,2, Hidayat Ullah Khan3, Abdul Shakoor4, Shahnaz Attaullah5, Ishrat Rahim1
ABSTRACT
In this study the ablation efficiency and the phenomenology of the etched keratin patterns have been investigated
and the surface modification was analysed. For effective studies of skin treatments, large areas of model skin need
to be generated. Therefore an ArF excimer Laser wavelength (193nm) with the ability to pattern square mm areas
per pulse was used even though the maximum repetition rates are typically an order of magnitude slower. Keratin
samples with different film thicknesses were ablated with different pulses. The depth of the ablated keratin layers with
different pulses were also measured by scanning the sample using a Dektak KLA-Tencor and the surface statistics of
the ablated keratin sample have been analysed using a white light interferometer WYKO NT1100.
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